Manuel d'utilisation / d'entretien du produit CY7C1392BV18 du fabricant Cypress
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18-Mbit DDR-II SIO SRAM 2-W ord Burst Architecture CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 38-05623 Rev .
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 2 of 31 Logic Block Diagram (CY7C1392BV18) Logic Block Diagram (CY7C1992BV18) 1M x 8 Array CLK A (19:0) Gen. K K Control Logic Address Register D [7:0] Read Add. Decode Read Data Reg.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 3 of 31 Logic Block Diagram (CY7C1393BV18) Logic Block Diagram (CY7C1394BV18) 512K x 18 Array CLK A (18:0) Gen. K K Control Logic Address Register D [17:0] Read Add.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 4 of 31 Pin Configuration The pin configuration for CY7C1392BV18, CY7C1992 BV18, CY7C1393BV18, and CY7 C1394BV18 follows.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 5 of 31 CY7C1393BV18 (1M x 18) 123456789 10 11 A CQ NC/144M NC/36M R/W BWS 1 K NC/28 8M LD A NC/72M CQ B NC Q9 .
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 6 of 31 Pin Definitions Pin Name IO Pin Descripti on D [x:0] Input- Synchronous Data Input Signals. Sampled on the rising edge of K and K clocks during val id write opera tions.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 7 of 31 CQ Echo Clock CQ is Referenced with Respect to C . This is a free-running clock and is synchronized to th e input clock for output data (C) of the DDR-II.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 8 of 31 Functional Overview The CY7C1392BV18, CY7C1992BV18, CY7C1393 BV18, and CY7C1394BV18 are synchronous pipelined Burst SRAMs equipped with a DDR-II Separate IO interface .
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 9 of 31 DLL These chips use a Delay Lock Loop (DLL) that is design ed to function between 120 MHz a nd the specified maximum clock frequency . During power up, when the DOF F is tied HIGH, the DLL is locked after 1024 cycles of st able clock.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 10 of 31 T ruth T able The truth table for CY7C1392BV18, CY7C1992BV 18, CY7C1393BV18, and CY7C1394BV18 follo ws. [2, 3, 4, 5, 6, 7] Operation K LD R/W DQ DQ Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edges.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 1 1 of 31 Write Cycle Descriptions The write cycle description tabl e for CY7C1992BV18 follows. [2, 8] BWS 0 K K L L–H – During the data portion of a write sequence, the single b yte (D [8:0] ) is written into the device.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 12 of 31 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA p ackage. This part is fully comp liant with IEEE S tandard #1 149.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 13 of 31 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister .
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 14 of 31 T AP Controller St ate Diagram The state diagram for the T AP controller follows.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 15 of 31 T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [10, 1 1, 12] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 16 of 31 T AP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Max Unit.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 17 of 31 Identification R egi ster Definitions Instruction Field Va l u e Description CY7C1392BV18 CY7C1992BV18 CY7 C1393BV18 CY7C1394BV18 Revision Numb er (31:29) 000 000 000 000 V ersion number .
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 18 of 31 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bum p ID 0 6R 27 1 1H 54 7B 81 3G .
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 19 of 31 Power Up Sequence in DDR-II SRAM DDR-II SRAMs must be power ed up and initialized in a predefined manner to prevent unde fined operations. Power Up Sequence ■ Apply power and drive DO FF either HIGH or LOW (all other inputs can be HIGH or LOW).
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 20 of 31 Maximum Ratings Exceeding maximum ratin gs may impair the useful life o f the device. These user guidelines are not teste d. S torage T emperature ......
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 21 of 31 I DD [19] V DD Operating Supply V DD = Max, I OUT = 0 mA, f = f MAX = 1/t CYC 200 MHz (x8) 575 mA (x9).
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 22 of 31 Cap acit ance T ested initially and after any design or process change that may affect these parameters. Parameter Description T est Condition s Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 23 of 31 Switching Characteristics Over the Operating Range [20, 21] Cypress Parameter Consor tium Parameter De.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 24 of 31 Output T imes t CO t CHQV C/C Clock Rise (or K/K in single clock mode) to Data V alid – 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns t DOH t CHQX Data Output Hold af ter Output C/C Clock Rise (Active to Active) –0.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 25 of 31 Switching W aveforms Figure 5. Read/Write/Deselect Sequence [2 6, 27, 28 ] K 123 4 5 6 7 8 K LD R/W A .
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 26 of 31 Ordering Information Not all of the speed, package, and temper ature ranges are available. Please cont act your local sale s representative or visit www .
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 27 of 31 250 CY7C1392BV18-250BZC 51-85180 165-Ball F ine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1992BV18-250BZC CY7C1393BV18-250BZC CY7C1394BV18-250BZC CY7C1392BV18-250BZXC 51-85180 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 28 of 31 167 CY7C1392BV18-167BZC 51-85180 165-Ball F ine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1992BV18-167BZC CY7C1393BV18-167BZC CY7C1394BV18-167BZC CY7C1392BV18-167BZXC 51-85180 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 29 of 31 Package Diagram Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø 0 . 2 5MCAB Ø0.
CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 Document #: 38-05623 Rev . *D Page 30 of 31 Document History Page Document Title: CY7C1392BV18/CY7C1992BV18/CY7C13 93BV18/C Y7C139 4BV18 , 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Document Number: 38-05623 Rev .
Document #: 38-05623 Rev . *D Revised June 2, 2008 Page 31 of 31 QDR RAMs an d Quad Data Rate RAMs comp rise a new family of product s developed by Cypress, I DT , NEC, Rene sas, and Samsung . All pr od uct and comp any names ment ioned in th is document are the tr ad emarks of their respe ctive hold ers.
Un point important après l'achat de l'appareil (ou même avant l'achat) est de lire le manuel d'utilisation. Nous devons le faire pour quelques raisons simples:
Si vous n'avez pas encore acheté Cypress CY7C1392BV18 c'est un bon moment pour vous familiariser avec les données de base sur le produit. Consulter d'abord les pages initiales du manuel d'utilisation, que vous trouverez ci-dessus. Vous devriez y trouver les données techniques les plus importants du Cypress CY7C1392BV18 - de cette manière, vous pouvez vérifier si l'équipement répond à vos besoins. Explorant les pages suivantes du manuel d'utilisation Cypress CY7C1392BV18, vous apprendrez toutes les caractéristiques du produit et des informations sur son fonctionnement. Les informations sur le Cypress CY7C1392BV18 va certainement vous aider à prendre une décision concernant l'achat.
Dans une situation où vous avez déjà le Cypress CY7C1392BV18, mais vous avez pas encore lu le manuel d'utilisation, vous devez le faire pour les raisons décrites ci-dessus,. Vous saurez alors si vous avez correctement utilisé les fonctions disponibles, et si vous avez commis des erreurs qui peuvent réduire la durée de vie du Cypress CY7C1392BV18.
Cependant, l'un des rôles les plus importants pour l'utilisateur joués par les manuels d'utilisateur est d'aider à résoudre les problèmes concernant le Cypress CY7C1392BV18. Presque toujours, vous y trouverez Troubleshooting, soit les pannes et les défaillances les plus fréquentes de l'apparei Cypress CY7C1392BV18 ainsi que les instructions sur la façon de les résoudre. Même si vous ne parvenez pas à résoudre le problème, le manuel d‘utilisation va vous montrer le chemin d'une nouvelle procédure – le contact avec le centre de service à la clientèle ou le service le plus proche.
