Manuel d'utilisation / d'entretien du produit KFN8GH6Q4M du fabricant Samsung
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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 1 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) . KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M 4Gb Flex-MuxOneNAND M-die * Samsung Electronics rese rves the right to cha nge product s or specification witho ut notice.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 2 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Revision History Document T itle Flex-MuxOneNAND Revision History Revision No. 0.0 0.1 History 1. Initial issue. 1. Corrected errata.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 3 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Revision History Revision No. 0.2 1.0 1.1 History 1. Corrected errata. 2. Chapter 2.1 Detailed Product Description revised. 3.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 4 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 1.0 INTRODUCTION This specification contains information about the Samsung Electronics Co mpany Flex-MuxOneNAND ‚ Flash memory product family .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 5 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 1.2 General Overview Flex-MuxOneNAND is a monolithic integrated circuit with a N AND Flash array using a NOR Flash interface.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 6 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 1.3 Product Features Device Architecture Design T echnology: .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 7 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.0 DEVICE DESCRIPTION 2.1 Det ailed Product Description The Flex-MuxOneNAND is an advanced generation, high-performance MLC NAND-based Flash memory(Which can be programmed as both SLC and MLC).
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 8 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.3 Pin Configuration 2.3.1 4Gb (KFM4GH6Q4M) / 8Gb (KFN8GH6Q4M) (TOP VIEW , Balls Fa cing Down) 63ball FBGA Flex-MuxOneNAND Chip 63ball, 10mm x 13mm x max 1.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 9 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.3.2 16Gb Product (KFKAGH6Q4M) (TBD) (TOP VIEW , Balls Fa cing Down) 63ball FBGA OneNAND Chip 63ball, 10mm x 13mm x max 1.4mmt , 0.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 10 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.4 Pin Description NOTE : Do not leave power supply(Vcc-Cor e/Vcc-IO, VSS) disconnect ed.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 11 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.5 Block Diagram 2.6 Memory Array Organization The Flex-MuxOneNAND architecture integrates several memory areas on a single chip.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 12 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Internal Memory Array Information Internal Memory Array Organization Area .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 13 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.6.2 External (BufferRAM) Me mory Organization The on-chip external memory is co mprised of 3 buffers used for Boot Code storage and data buffering.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 14 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.7 Memory Map The following tables are the memory maps for the Flex-MuxOneNAND. 2.7.1 Internal (NAND Array) Me mory Organization The following tables show the Internal Memory address map in word o rder .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 15 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 16 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 17 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 18 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 19 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 20 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 21 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 22 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 23 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 24 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 25 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 26 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 27 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 28 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 29 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 30 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.7.2 Internal Memor y Sp are Area Assignment The figure below shows the assignment of the spare area in the Internal Memory NAND Arr ay .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 31 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.7.3 External Memory (Bu fferRAM) Address Map The following table shows th e External Me mory address map in Word and Byte Order.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 32 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.7.4 External Memory Map Detail Information The tables below show Word Order Address Map informat ion for the BootRAM and DataRAM main and spare areas.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 33 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.7.5 External M emory Sp are Area Assignm ent Buf.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 34 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Buf. Word Address Byte Address F E D C B A 9 8 7 6 5 4 3 2 1 0 DataS 0_2 8.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 35 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) NOTE : In case of ‘with ECC’ mode, Fle x-MuxOneNAN D automatically gen.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 36 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8 Registers Section 2.8 of this specificat ion provides information about t he Flex-MuxOneNAND4G registers.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 37 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.2 Manufacturer ID Register F000h (R) This Read register describes t he manufacturer's identification. Samsung Electronics Company manufacturer's ID is 00ECh.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 38 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.4 V ersion ID Register F 002h This register is reserved for future use. 2.8.5 Dat a Buffer Size Regist er F003h (R) This Read register describes the size of the Data Buffer .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 39 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.6 Boot Buffer Size Regist er F004h (R) This Read register describes the size of the Boot Buffer . F004h, default = 0200h 2.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 40 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.9 St art Address1 Register F100h (R/W) This Read/Write register describes the NAND Flash block address which will be l oaded, programmed, or erased.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 41 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.16 S t art Address8 Regis ter F107h (R/W) This Read/Write register des.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 42 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Sector allocation according t o BSC(CASE1 : FSA=00) Sector allocation acco.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 43 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.18 Command Register F220 h (R/W) Command can be issued by two following methods, and user ma y select one way or the other to issue appropriate command; 1.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 44 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.18.1 T wo Methods to Clear Interrupt Register in Command Input T o clear Interrupt Register in command input, user may select one from either following me thods.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 45 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.19 System Configuration 1 Register F221 h (R, R/W) This Read/Write register descri bes the system configuration.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 46 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Burst Length (BL) Host must follow burst length set by BL when reading data in synchronous burst read.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 47 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) I/O Buffer Enable (IOBE) IOBE is the I/O Buffer Enable for the INT and RDY signals. At st artup, INT and RDY outputs are High-Z.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 48 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Write Mode (WM) Write Mode Information[1] MRS(Mode Register Setting) Descript ion NOTE : 1) Operation not guara nteed for cases not defined in above table.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 49 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.20 System Configuration 2 Regist er F222h This register is reserved for future use.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 50 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) OTP Lock Status (OTP L ) This bit shows whether the OTP block is locked or unlocked.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 51 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Controller Status Register Output Modes NOTE : 1) "1" for PI L Block Lock, "0" for PI L Block Unlock. 2) "1" for 1st B lock OTP Lock, "0" for 1st Block OTP Unlock.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 52 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Read Interrupt (RI) This is the Read interrupt bit. RI Interrupt [ 7] Write Interrupt (WI) This is the Write interrupt bit. WI Interrupt [6] Erase Interrupt (EI) This is the Erase interrupt bit.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 53 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Reset Interrupt (RSTI) This is the Reset interrupt bit. RSTI Interrupt [4] 2.8.23 S t art Block Addre ss Regist er F24Ch (R/W) This Read/Write register shows the NAND Flash block address in the Write Protection mode.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 54 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.26 ECC S t atus Register 1 FF00 h (R) This Read register shows the Error Correction Status. Th e Flex-MuxOneNAND can correct up to 4-bit errors.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 55 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.0 DEVICE OPERA TION This section of the data sheet discusses the operation of the Flex-MuxOneN AND device . It is followed by AC/DC Characteristics and T iming Diagrams which may be consulted for further information.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 56 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.1.1 Reset Flex-Mux OneNAND Command The Reset command is given by writing 00F0h to the boot partiti on address. Reset will return a ll default values into the device .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 57 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.2 Device Bus Operation The device bus operations are shown in the ta ble below. NOTE : 1) L=VIL (Low), H=VIH (High), X=Don’t Care.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 58 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.3 Reset Mode Operation The Flex-MuxOneNAND has 4 reset modes: Cold/Warm/Hot Reset, and NAND Flash Array Reset. Section 3.3 discusses the operation of these reset modes.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 59 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.3.1 Cold Reset Mode Op eration See Timing Diagram 6.15 At system power-up, the voltage detector in the device detects the rising edge of Vcc and releases an internal power-up reset s ignal.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 60 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.4 Write Protection Op eration The Flex-MuxOneNAND can be write-protected to preven t re-programming or erasure of data. The areas of write-protection are the BootRAM, and the NAND Flash Array .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 61 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.4.3.1 Unlocked NAND Array Wr ite Protection S t ate An Unlocked block can be programmed or erased.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 62 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.4.3.3 Locked-tigh t NAND Array Write Protection St ate A block that is in a locked-tight state can only be changed to lo cked state after a Cold or Warm Reset.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 63 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Data Protection Operation Flow Diagram * Samsung strong ly recommends to fo llow the ab ove flow ch art NOTE : 1) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 64 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) All Block Unlock Flow Diagram *Samsung strongly recommen ds to follow the above flow chart NOTE : 1) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 65 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.5 Dat a Protection During Power Down Operation See Timing Diagrams 6.19 The device is designed to offer protection from any involuntary program/erase during power-transitions.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 66 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.6.1 Superload Oper ation See Timing Diagrams 6.10 The Superload operation is used to read mu ltiple pages. During Superload operation, up to 4bit errors are corrected.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 67 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.6.2 LSB Page Recov ery Read MLC NAND Flash cell has paired pages - LSB page and MSB page. LSB p age has lower page address and MSB p age has higher page address in paired pages.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 68 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.7 Read Operation See Timing Diagrams 6.1,6.2, 6.3 and 6.4. The device has two read modes; Asynchr onous Read an d Synchronous Burst Read.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 69 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.7.2.1 Continuous Linear Burst Read Operation See Timing Diagram 6.2 First Clock Cycle The initial word is output at tIAA after the rising edge of the fi rst CLK cycle.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 70 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.7.2.3 Programmable Burst Read La tency Operation See Timing Diagrams 6.1 and 6.2 Upon power up, the number of initial cl ock cycles from V alid Address (A VD ) to initial data defaults to four clocks.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 71 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.8 Synchronous Write(RM=1, WM =1) See Timing Diagram 6.6, 6.7 and 6.8 Burst mode operations enable high-spee d synchronous read and write operations.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 72 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.9 Program Operation See Timing Diagrams 6.1 1 The Program operation is used to program data from the on-chip BufferRAMs into the NAND FLASH memory array .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 73 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Paired Page Address Information In case of MLC partition, when Program, Cache Program, Interleav e cache program, Copy-back with r andom data in operations are a bnor- mally aborted(eg.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 74 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Pairing of pages in MLC block: 0 1 2 3 4 5 6 7 8 9 A B C D E F 10 11 12 13 14 15 16 17 78 79 7A 7B 7C 7D 7E 7F .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 75 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Program Operation Fl ow Diagram NOTE : 1) DBS must be set before data input. 2) Data input could be done anywhere between "S tart" and "Write Program Command".
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 76 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Program Interleave(@DDP) Flow C hart NOTE : 1) DBS must be set before data input. 2) FSA must be 00 and BSC must be 000 within pro gram operation 3) BSA must be 1000 and BSC must be 000.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 77 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.9.1 Cache Program Operation See Timing Diagram 6.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 78 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Cache Program Operation Fl ow Diagram NOTE : 1) DBS must be set before dat a input. 2) FSA must be 00 and BSC must be 000 within pro gram operation.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 79 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.9.2 Interl eave Cach e Program Ope ration The Interleave Cache Program is available only on DDP . Host can write data on a chip while programming anothe r chip with this operation.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 80 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Interleave Cache Program Operation F low Diagram NOTE : 1) DBS must be set before dat a input. 2) FSA must be 00 and BSC must be 000 within pro gram operation.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 81 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.10 Copy-Back Program Operat ion with Random Data Input The Copy-Back Program Operation with Random Data Input in Flex -MuxOneNAND consists of 3 phases, Load data into DataRAM, Modify data and program into designated p age.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 82 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.1 1 Erase Operation 3.1 1 .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 83 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Erase Interleave 1) (@DDP) Flow Chart NOTE : 1) Erase Suspend and Erase Resume Operations are not suppor ted in Erase Interleave(@DDP).
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 84 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.1 1.2 Erase Suspend / Erase Resume Operation The Erase Suspend/Erase Res.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 85 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12 Partition Information (P I) Block (SLC Only) One Block of the SLC NAND Flash Array memory is res erved for Partition In formation (PI) Block.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 86 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.1 PI Block Boundary Information s etting It is 1st word of sector0 of page0 of main area of PI Blo ck. The Lock bits for PI Block and Boundary address of SLC and MLC are stored.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 87 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.1.1 PI Block Acces s mode entry The PI area is a separate part of the NAND Flash Array memory .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 88 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.1.2 PI Block Erase The PI Block Erase Operation erases the ent ire PI block including Partition Informati on. PI Block Access mode entry must be don e before issuing Erase operation for PI Block.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 89 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.1.3 PI Block Progra m Operation The PI Block Program Operation accesses the PI area and programs content from the DataRAM on-chip buffer to the designated page (s) of the PI.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 90 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.1.4 PI Up date Once new partition information is programmed into the PI block, an internal register that is invisible to users must be updated for the changes in PI to be applied.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 91 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.2 PI Block Load Operation A PI Block Load Operation accesses the PI area and transfers identi fied content fr om the PI to the DataRAM on-chip buffer , thus making the PI contents available to the Host.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 92 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13 OTP Operation (SLC only) One Block of the NAND Flash Array memory is reserv e d as a One-Time Programmable Block memory area.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 93 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) OTP Block Area Structure 1st Block OTP Area Structure One Block: 256KB+8KB.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 94 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13.1 OTP Block L oad Operation An OTP Block Load Operation accesses the OTP area and transfer s i dentified content from the OTP to the D ataRAM on-chip buffer , thus making the OTP contents available to the Host.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 95 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13.2 OTP Block Pro gram Operation An OTP Block Program Operation accesses the OTP area and program s content from the DataRAM on-chip buffer to the designated pag e(s) of the OTP .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 96 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) OTP Block Program Operatio n Flow Chart NOTE : 1) FBA(NAND Flash Block Address) could be omitted or any address. 2) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 97 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13.3 OTP Block L ock Operation Even though the OTP area can only be programmed once witho ut erase capability , it can be locked when the device starts up to pr event any changes from being made.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 98 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) OTP Block Lock Operatio n Flow Chart NOTE : 1) FBA(NAND Flash Block Address) could be omitted or any address. 2) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 99 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13.4 1st Block OT P Lock Operation 1st Block can be used as OTP , for secured booting operation.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 100 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 1st Block OTP Lock Operation Flow Chart NOTE : 1) FBA(NAND Flash Block Address) could be omitted or any address. 2) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 101 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13.5 OTP and 1st Block OTP Loc k Operation OTP and 1st Block can be locked simultaneously , for lo cking bit lies in the same word of OTP area.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 102 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) OTP and 1st Block OTP Lock Operation Flo w Chart NOTE : 1) FBA(NAND Flash Block Address) could be omitted or any address. 2) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 103 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.14 DQ6 T oggle Bit The Flex-MuxOneNAND device has DQ6 T oggle bit. T oggle bit is another option to dete ct whether an internal load operation is in progress or completed.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 104 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.15 ECC Operation The Flex-MuxOneNAND device has on-chip ECC wi th the capability of correcting up to 4-bi t errors in the NAND Flash Array memory main and spare areas (512+16)B.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 105 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.16 Invalid Block Operation Invalid blocks are defined as blocks in t he device's NAND Flash Array memory that cont ain five or more inva lid bits which cause status failure during Program and Erase operation.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 106 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Invalid Block T abl e Creation Flow Chart 3.16.2 Invalid Block Replaceme nt Operation Within its life time, additional invalid blocks may develop with NAND Flash Array me mory .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 107 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Referring to the diagram for further illustration, whe n an er ror happen.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 108 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 4.0 DC CHARACTERISTICS 4.1 Absolute Maximum Ratings NOTE : 1) Minimum DC voltage is -0.5V on In put/ Output pins. During transit ions, this level should not fall to POR level(typ.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 109 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 4.3 DC Characteristics NOTE : 1) CE should be VIH for RDY . IOBE should be ‘0’ for INT . 2) I CC active for Host access 3) I CC active for Internal operation.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 110 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 5.0 AC CHARACTERISTICS 5.1 AC T est Conditio ns 5.2 Device Cap acit ance CAP ACIT ANCE (T A = 25 C, V CC = 1.8V , f = 1.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 111 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 5.4 AC Characteristics fo r Synchronous Burst Read See Timing Diagrams 6.1 and 6.2 NOTE : 1) If OE is disabled at the same time or before CE is disabled, the output will go to high-z by t OEZ .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 112 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 5.5 AC Characteristics for Asynchronous Read See Timing Diagrams 6.3 and 6.4. NOTE : 1) If OE is disabled at the same time or before CE is disabled, the output will go to high-z by tOEZ.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 113 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 5.7 AC Characteristics for Asynchronous Write See Timing Diagrams 6.5 5.8 AC Characteristics for Burst Write Operation See Timing Diagrams 6.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 114 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 5.9 AC Characteristics for Loa d/Program/Erase Performance See Timing Diagrams 6.9, 6.10, 6.1 1, 6.12, 6.13 and 6.14 NOTE : 1) These parameters are tested based on INT bit of interrupt re gister .
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 115 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.0 TIMING DIAGRAMS 6.1 8-Word Linear Burst R ead Mode with W rap Around See AC Characteristics T able 5.4 6.2 Continuous Linear Burst Re ad Mode with Wrap Around See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 116 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.3 Asynchronous Read (V A T ransition Before A VD Low) See AC Characteristics T able 5.5 NOTE : V A=V alid Read Ad dress, RD=Read Data.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 117 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.5 Asynchronous Write See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 118 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.6 8-Word Linear Burst W rite Mode See AC Characteristics T able 5.8 6.7 Burst Write Operation followed by Burst Read See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 119 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.8 St art Initial Burst Write Operation See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 120 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.9 Load Operation Timing See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 121 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.10 Superload Operation Timing See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 122 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.1 1 Program Operation Timing See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 123 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.12 Cache Program Operation Timing See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 124 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.13 Interleave Cache Pr ogram Operation Timing See AC Characteristics T able 5.7 and T able 5.9 1st data input 2nd data input Address Setting cache program Command ADQ0~ A1, A2, An : Address of DataRAM to be written.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 125 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.14 Block Erase Operation Timing See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 126 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.15 Cold Reset Timing NOTE : 1) Bootcode copy operation st arts 400u s later than POR activation. The system power should reach Vcc afte r POR triggering level(typ.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 127 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.16 W a rm Reset Timing See AC Characteristics T able 5.6 NOTE : 1) The status which can acce pt any register based oper ation(Load, Program, Er ase command, etc).
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 128 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.17 Hot Reset Timing See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 129 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.18 NAND Flash Core Reset T iming See AC Characteristics T able 5.6 6.19 Dat a Protection Timing Duri ng Power Down The device is designed to offer protection from any in voluntary program/erase during power-transitions.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 130 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.20 T oggle Bit Timing in Asynchrono us Read (V A T ransition Before A VD Low) See AC Characteristics T able 5.5 NOTE : 1) V A=V alid Read Address, RD=Read Data.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 131 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.22 INT auto mode See AC Characteristics T able 5.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 132 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.0 TECHNICAL AND APPLICA TION NOTES From time-to-time supplemental technical information and application notes pertaining to the design and operation of the device in a system are included in this section.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 133 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.1.1 The INT Pin to a Host General Purpose I/O INT can be tied to a Host GPIO to detect the rising edge of INT , signaling the end of a command operation.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 134 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.1.2 Polling the Inte rrupt Register S t atus Bit An alternate method of determining the end of an operation is to c ont inuously monitor the Interrupt Status Register Bit instead of using the INT pin.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 135 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.1.3 Determining Rp V a lue (DDP , QDP O nly) For general operation, INT operates as normal outpu t pin, so that tF is equivalent to tR (below 10ns).
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 136 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) ~50k ohm INT Vcc or Vccq Rp INT pol = ‘Low’ Busy S t ate Ready VOH tf tr VOL Vss Vcc tr ,tf Ibusy [mA] Rp( oh m) Ibusy tf[ u s ] KFN8GH6Q4M @ Vcc = 1.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 137 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.2 Boot Sequence One of the best features Flex-MuxOneNAND has is that it.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 138 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) NOTE : 1) Step 2 and Step 3 can be copied into DRAM thro ugh two DataRAMs.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 139 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.3 Partition of Flex-MuxOneNAND Flex-MuxOneNAND is the combo device whic h has SLC and MLC partition in one-chip.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 140 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.4 DDP and QDP Description DDP(Dual Die Package): 8Gb DDP Flex-OneNAND contains two chips of 4Gb which are multiplexed such that they provide a single address range interf ace, w ith dou- ble the storage capacity.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 141 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 8.0 P ACKAGE DIMENSIONS (TBD) 0.10 MAX 0.45 ±0.05 0.32 ±0.0 5 0.9 ±0.10 BOTTOM VIEW TOP VIEW A C E B D F 0.80x9=7.20 A 0.
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 142 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 16G product (KFKAG H6Q4M) 0.10 MAX 0.45 ±0.05 0.32 ±0.0 5 1.3 ±0.10 BOTTOM VIEW TOP VIEW A C E B D F 0.80x9=7.20 A 0.80x1 1=8.
Un point important après l'achat de l'appareil (ou même avant l'achat) est de lire le manuel d'utilisation. Nous devons le faire pour quelques raisons simples:
Si vous n'avez pas encore acheté Samsung KFN8GH6Q4M c'est un bon moment pour vous familiariser avec les données de base sur le produit. Consulter d'abord les pages initiales du manuel d'utilisation, que vous trouverez ci-dessus. Vous devriez y trouver les données techniques les plus importants du Samsung KFN8GH6Q4M - de cette manière, vous pouvez vérifier si l'équipement répond à vos besoins. Explorant les pages suivantes du manuel d'utilisation Samsung KFN8GH6Q4M, vous apprendrez toutes les caractéristiques du produit et des informations sur son fonctionnement. Les informations sur le Samsung KFN8GH6Q4M va certainement vous aider à prendre une décision concernant l'achat.
Dans une situation où vous avez déjà le Samsung KFN8GH6Q4M, mais vous avez pas encore lu le manuel d'utilisation, vous devez le faire pour les raisons décrites ci-dessus,. Vous saurez alors si vous avez correctement utilisé les fonctions disponibles, et si vous avez commis des erreurs qui peuvent réduire la durée de vie du Samsung KFN8GH6Q4M.
Cependant, l'un des rôles les plus importants pour l'utilisateur joués par les manuels d'utilisateur est d'aider à résoudre les problèmes concernant le Samsung KFN8GH6Q4M. Presque toujours, vous y trouverez Troubleshooting, soit les pannes et les défaillances les plus fréquentes de l'apparei Samsung KFN8GH6Q4M ainsi que les instructions sur la façon de les résoudre. Même si vous ne parvenez pas à résoudre le problème, le manuel d‘utilisation va vous montrer le chemin d'une nouvelle procédure – le contact avec le centre de service à la clientèle ou le service le plus proche.
